GAAFET

Global Semiconductor Foundry Landscape: TSMC, Samsung, and Intel’s 2nm Node Strategy Update

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Global Semiconductor Foundry Landscape- Visualization of the 2nm node race between TSMC, Samsung, and Intel strategies

1. Introduction: The Geopolitics and Physics of the 2-Nanometer Frontier   The semiconductor industry is entering the “Angstrom Era,” defined by the migration to 2nm-class process nodes (20A, 18A, N2). This transition is not merely an incremental step; it represents the largest architectural shift in transistor design since the move from planar transistors to FinFETs … Read more

2nm Chip War: How TSMC, Samsung, and Intel’s Battle Will Define Your Next iPhone’s Battery Life

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Diagram illustrating the Gate All Around GAAFET Nanosheet structure compared to the older FinFET architecture for 2nm chips

💡 The Angstrom Era The Foundry Triopoly at 2nm   The year 2026 marks the beginning of the Angstrom Era in semiconductor manufacturing, a period where critical dimensions are measured in tenths of a nanometer. This technological inflection point is defined by the shift from the venerable FinFET (Fin Field-Effect Transistor) architecture to the revolutionary … Read more